Tataria, H. et al. 6G wireless systems: vision, requirements, challenges, insights, and opportunities. Proc. IEEE 109, 1166–1199 (2021).
Google Scholar
Yole Group launches its first Status of the RF Industry report: a $70 billion market by 2030 in a new era of integration and global competition. Yole Group https://www.yolegroup.com/press-release/yole-group-launches-its-first-status-of-the-rf-industry-report-a-70-billion-market-by-2030-in-a-new-era-of-integration-and-global-competition (2025).
Heydari, P. Transceivers for 6G wireless communications: challenges and design solutions. In Proc. 2021 IEEE Custom Integrated Circuits Conference (CICC) (eds Dai, F. F. et al.) 1–8 (IEEE, 2021); https://doi.org/10.1109/CICC51472.2021.9431450.
Kim, D. et al. Emerging memory electronics for non-volatile radiofrequency switching technologies. Nat. Rev. Electr. Eng. 1, 10–23 (2024).
Google Scholar
Huo, Y., Dong, X., Xu, W. & Yuen, M. Enabling multi-Functional 5G and beyond user equipment: a survey and tutorial. IEEE Access 7, 116975–117008 (2019).
Google Scholar
Psychogiou, D. & Gómez-García, R. Forging the future of sustainable connectivity: hyperflexible and multifunctional RF filtering technologies. IEEE Microw. Mag. 27, 47–61 (2026).
Sobolewski, J. & Yashchyshyn, Y. State of the art sub-terahertz switching solutions. IEEE Access 10, 12983–12999 (2022).
Google Scholar
Singh, T., Hummel, G., Vaseem, M. & Shamim, A. Recent advancements in reconfigurable mmWave devices based on phase-change and metal insulator transition materials. IEEE J. Microw. 3, 827–851 (2023).
Google Scholar
Juneja, S., Pratap, R. & Sharma, R. Semiconductor technologies for 5G implementation at millimeter wave frequencies—design challenges and current state of work. Eng. Sci. Technol. Int. J. 24, 205–217 (2021).
Strinati, E. C. et al. The hardware foundation of 6G: The NEW-6G approach. In Proc. 2022 Joint European Conference on Networks and Communications & 6G Summit (EuCNC/6G Summit) (eds O’Donohue, P. & Dauvé, S.) 423–428 (IEEE, 2022); https://doi.org/10.1109/EuCNC/6GSummit54941.2022.9815700.
Cheon, C. D. et al. A new wideband, low insertion loss, high linearity SiGe RF switch. IEEE Microw. Wirel. Compon. Lett. 30, 985–988 (2020).
Google Scholar
Rack, M., Nyssens, L., Wane, S., Bajon, D. & Raskin, J.-P. DC-40 GHz SPDTs in 22 nm FD-SOI and back-gate impact study. In Proc. 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (eds Huebert, G. & Wang, H.) 67–70 (IEEE, 2020); https://doi.org/10.1109/RFIC49505.2020.9218317.
Howell, R. S. et al. Advances in the super-lattice castellated field effect transistor (SLCFET) for wideband low loss RF switching applications. In Proc. 2016 IEEE MTT-S International Microwave Symposium (IMS) (ed. Khanna, A.) 1–3 (IEEE, 2016); https://doi.org/10.1109/MWSYM.2016.7540023.
Florian, C., Gibiino, G. P. & Santarelli, A. Characterization and modeling of RF GaN switches accounting for trap-induced degradation under operating regimes. IEEE Trans. Microw. Theory Tech. 66, 5491–5500 (2018).
Google Scholar
Thome, F., Brückner, P., Quay, R. & Ambacher, O. Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology. In Proc. 2019 IEEE MTT-S International Microwave Symposium (IMS) (eds Gouker, M. & Kushner, L.) 1403–1406 (IEEE, 2019); https://doi.org/10.1109/MWSYM.2019.8700955.
Ghozati, S. U. & Quaglia, R. Ka-band single-pole double-throw switch in GaN MMIC technology. Int. J. Microw. Wirel. Technol. 17, 202–212 (2025).
Sonnenberg, T., Romano, T., Verploegh, S. & Popović, Z. V- and W-band GaN MMIC switches. In Proc. 2023 18th European Microwave Integrated Circuits Conference (EuMIC) (eds Zwick, T. & Issakov, V.) 257–260 (IEEE, 2023); https://doi.org/10.23919/EuMIC58042.2023.10288636.
Trinh, K. T., Kao, H.-L., Chiu, H.-C. & Karmakar, N. C. A Ka-band GaAs MMIC traveling-wave switch with absorptive characteristic. IEEE Microw. Wirel. Compon. Lett. 29, 394–396 (2019).
Google Scholar
Lu, D., Liu, J. & Yu, M. Highly selective bandpass switch block with applications of MMIC SPDT switch and switched filter bank. IEEE Solid-State Circuits Lett. 5, 190–193 (2022).
Google Scholar
Tsao, C.-M. & Hsu, H.-T. An ultra-wideband, high power and high isolation single-pole-double-throw switch using capacitive loading approach. IEEE Trans. Circuits Syst. II 70, 4013–4017 (2023).
Zhu, H.-R., Ning, X.-Y., Huang, Z.-X., Guo, Y.-X. & Wu, X.-L. Miniaturized, ultra-wideband and high isolation single pole double throw switch by using π-type topology in GaAs pHEMT technology. IEEE Trans. Circuits Syst. II 68, 191–195 (2021).
Shivan, T. et al. A high-isolation and highly linear super-wideband SPDT switch in InP DHBT technology. In Proc. 2020 IEEE/MTT-S International Microwave Symposium (IMS) (eds Lee, T. et al.) 1125–1128 (IEEE, 2020); https://doi.org/10.1109/IMS30576.2020.9223920
Lanza, M. et al. The growing memristor industry. Nature 640, 613–622 (2025).
Google Scholar
Wainstein, N., Adam, G., Yalon, E. & Kvatinsky, S. Radiofrequency switches based on emerging resistive memory technologies—a survey. Proc. IEEE 109, 77–95 (2021).
Google Scholar
Wen, C.-Y. et al. A phase-change via-reconfigurable on-chip inductor. In Proc. 2010 International Electron Devices Meeting (eds Ieong, M. et al.) 10.3.1–10.3.4 (IEEE, 2010); https://doi.org/10.1109/IEDM.2010.5703334.
Dykstra, J. et al. A low-loss, wideband, 0–110 GHz SPDT using PCM RF switches with integrated CMOS drivers. In Proc. 2025 IEEE/MTT-S International Microwave Symposium – IMS 2025 (eds Rosenau, S. & Banwait, J.) 678–681 (IEEE, 2025); https://doi.org/10.1109/IMS40360.2025.11103804.
El-Hinnawy, N., Slovin, G., Moen, K., Masse, C. & Howard, D. A tale of two phases: an overview of phase-change material RF switch technology: sub-20-fs RON*COFF RF switch technology for the mm-wave and 5G/6G revolutions. IEEE Microw. Mag. 25, 57–76 (2024).
Google Scholar
Leon, A. et al. RF power-handling performance for direct actuation of germanium telluride switches. IEEE Trans. Microw. Theory Tech. 68, 60–73 (2020).
Google Scholar
Wainstein, N., Orren, A., Nir-Harwood, R.-G., Yalon, E. & Kvatinsky, S. Asymmetric and symmetric single-pole double-throw with improved power handling using indirectly heated phase-change switches. IEEE Trans. Electron Devices 72, 344–349 (2025).
Google Scholar
Anagnostou, D. E., Torres, D., Teeslink, T. S. & Sepulveda, N. Vanadium dioxide for reconfigurable antennas and microwave devices: enabling RF reconfigurability through smart materials. IEEE Antennas Propag. Mag. 62, 58–73 (2020).
Google Scholar
Pi, S., Ghadiri-Sadrabadi, M., Bardin, J. C. & Xia, Q. Nanoscale memristive radiofrequency switches. Nat. Commun. 6, 7519 (2015).
Kim, M. et al. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems. Nat. Electron. 3, 479–485 (2020).
Google Scholar
Yang, S. J. et al. Reconfigurable low-voltage hexagonal boron nitride nonvolatile switches for millimeter-wave wireless communications. Nano Lett. 23, 1152–1158 (2023).
Google Scholar
Kim, M. et al. Monolayer molybdenum disulfide switches for 6G communication systems. Nat. Electron. 5, 367–373 (2022).
Google Scholar
Kim, M. et al. Zero-static power radio-frequency switches based on MoS2 atomristors. Nat. Commun. 9, 2524 (2018).
Google Scholar
Ge, R. et al. Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides. Nano Lett. 18, 434–441 (2018).
Google Scholar
Pazos, S. et al. Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications. Nat. Electron. 7, 557–566 (2024).
Google Scholar
Zhu, K. et al. Hybrid 2D–CMOS microchips for memristive applications. Nature 618, 57–62 (2023).
Google Scholar
Chen, S.-C. et al. HfO2 memristor-based flexible radio frequency switches. ACS Nano 19, 704–711 (2025).
Google Scholar
Shen, Y. et al. Variability and yield in h-BN-based memristive circuits: the role of each type of defect. Adv. Mater. 33, 2103656 (2021).
Google Scholar
Shen, Y. et al. Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy. Nat. Electron. 7, 856–867 (2024).
Google Scholar
Lanza, M. et al. Temperature of conductive nanofilaments in hexagonal boron nitride based memristors showing threshold resistive switching. Adv. Electron. Mater. 8, 2100580 (2021).
Google Scholar
Pazos, S. et al. High-temporal-resolution characterization reveals outstanding random telegraph noise and the origin of dielectric breakdown in h-BN memristors. Adv. Funct. Mater. 34, 2213816 (2024).
Google Scholar
El-Hinnawy, N. et al. Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials. Appl. Phys. Lett. 105, 013501 (2014).
Google Scholar
Aspiotis, N. et al. Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process. npj 2D Mater. Appl. 7, 18 (2023).
Google Scholar
Lee, J. et al. Atomic layer deposition of layered boron nitride for large-area 2D electronics. ACS Appl. Mater. Interfaces 12, 36688–36694 (2020).
Google Scholar
Xie, J. et al. On-chip direct synthesis of boron nitride memristors. Nat. Nanotechnol. 20, 1596–1604 (2025).
Google Scholar
Chen, M. et al. Ultrawide-bandwidth boron nitride photonic memristors. Nat. Nanotechnol. 20, 1633–1640 (2025).
Google Scholar
Jayachandran, D., Sakib, N. U. & Das, S. 3D integration of 2D electronics. Nat. Rev. Electr. Eng. 1, 300–316 (2024).
Yang, Y., Peng, Y., Saleem, M. F., Chen, Z. & Sun, W. Hexagonal boron nitride on III–V compounds: a review of the synthesis and applications. Materials 15, 4396 (2022).
Google Scholar
Chen, S. et al. Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks. Nat. Electron. 3, 638–645 (2020).
Google Scholar
Yuan, Y. et al. On-chip atomristors. Mater. Sci. Eng.: R 165, 101006 (2025).
Google Scholar
Alharbi, O. et al. Integration of Ag-based threshold switching devices in silicon microchips. Mater. Sci. Eng. R 161, 100837 (2024).
Google Scholar
Zheng, W. et al. Scalable production of highly-reliable graphene-based microchips. Adv. Mater. 37, e10501 (2025).
Google Scholar
Yuan, Y. et al. On the quality of commercial chemical vapour deposited hexagonal boron nitride. Nat. Commun. 15, 4518 (2024).
Google Scholar
Ghosh, S. et al. A complementary two-dimensional material-based one instruction set computer. Nature 642, 327–335 (2025).
Google Scholar
Yalon, E. et al. Energy dissipation in monolayer MoS2 electronics. Nano Lett. 17, 3429–3433 (2017).
Google Scholar
Swoboda, T. et al. Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy. Nanoscale 15, 7139–7146 (2023).
Google Scholar
Deshmukh, S. et al. Direct measurement of nanoscale filamentary hot spots in resistive memory devices. Sci. Adv. 8, 1514 (2022).
Google Scholar
Datye, I. M. et al. Localized heating and switching in MoTe2-based resistive memory Devices. Nano Lett. 20, 1461–1467 (2020).
Google Scholar
Puyoo, E., Grauby, S., Rampnoux, J.-M., Rouvière, E. & Dilhaire, S. Scanning thermal microscopy of individual silicon nanowires. J. Appl. Phys. 109, 024302 (2011).
Google Scholar
Liu, S. et al. Analysis of the negative-SET behaviors in Cu/ZrO2/Pt devices. Nanoscale Res. Lett. 11, 542 (2016).
Google Scholar
Pozar, D. M. Microwave Engineering (Wiley, 2012).
Hong, J.-S. Microstrip Filters for RF/Microwave Applications (Wiley, 2011); https://doi.org/10.1002/9780470937297.fmatter.
Shinjo, S., Nakatani, K., Tsutsumi, K. & Nakamizo, H. Integrating the front end: a highly integrated RF front end for high-SHF wide-band massive MIMO in 5G. IEEE Microw. Mag. 18, 31–40 (2017).
Google Scholar
Skrimponis, P. et al. Towards energy efficient mobile wireless receivers above 100 GHz. IEEE Access 9, 20704–20716 (2021).
Google Scholar
Mondal, S. & Paramesh, J. A reconfigurable 28-/37-GHz MMSE-adaptive hybrid-beamforming receiver for carrier aggregation and multi-standard MIMO communication. IEEE J. Solid-State Circuits 54, 1391–1406 (2019).
Google Scholar
Xu, Z. R. et al. Conductive bridging-based memristive RF switches on a silicon substrate. IEEE Trans. Microw. Theory Tech. 70, 24–34 (2022).
Google Scholar
Pazos, S. M. et al. Reconfigurable mmWave microchips co-integrating hBN switches on GaN — source data. Zenodo https://doi.org/10.5281/zenodo.20328995 (2026).
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www.nature.com